Low voltage operating organic light emitting transistors with efficient charge blocking layer

Charge injection/blocking layers play important roles in the performances of organic electronic devices. Their incorporation into light emitting transistors has been limitted, due to generally high operating voltages (above 60 V) these In this work, two hole blocking molecules are integrated tris-(8-hydroxyquinoline) aluminum (Alq3) based under voltage as low 5 V. The effects and electron injection decoupled through differences energy levels. Significantly improved optical performance is achieved with molecule suitable level for injection. Surprisingly, a decreased observed case another evidencing that charge overweighs device architecture.